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April 2001
SI3948DV Dual N-Channel Logic Level PowerTrench(R) MOSFET
General Description Features
2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 V RDS(ON) = 0.145 @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 S1 D1
1 .56
G2 S2
4
3
5
2
SuperSOT TM-6
pin 1
G1
6
1
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise note
Ratings
Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
30 20 2.5 10 0.96 0.9 0.7 -55 to 150
V V A
W
TJ,TSTG RJA RJC
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
130 60
C/W C/W
SI3948DV Rev.A
(c) 2001 Fairchild Semiconductor Corporation
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 55 oC VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
o
30 23.6 1 10 100 -100
V mV/oC A A nA nA
BVDSS/TJ
IDSS IGSSF IGSSR
Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 oC VGS = 10 V, ID = 2.5 A TJ = 125 C VGS = 4.5 V, ID = 2.0 A
o
1
1.8 -4 0.082 0.122 0.113
3
V mV/oC
VGS(th)/TJ
RDS(ON)
0.095 0.152 0.145
ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Notes:
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Continuous Source Diode Current Drain-Source Diode Forward Voltage
VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 2.5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz
10 5 220 50 25
A S pF pF pF 12 18 22 6 3.2 1 1.3 0.75 ns ns ns ns nC nC nC A V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
VDD = 5 V, ID = 1 A, VGS = 10 V, RGEN = 6
6 10 12 2
VDS = 15 V, ID = 2.5 A VGS = 5 V
2.3 0.7 0.9
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS = 0 V, IS = 0.75 A
(Note 2)
0.78
1.2
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
a. 130OC/W on a 0.125 in2 pad of 2oz copper.
b. 140OC/W on a 0.005 in2 pad of 2oz copper.
c. 180OC/W on a minimum pad.
SI3948DV Rev.A
Typical Electrical Characteristics
10 I D , DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
VGS =10V 6.0V
4.5V 4.0V
R DS(ON) , NORMALIZED
2 1.8 1.6 1.4 1.2 1 0.8
8
VGS = 4.0V 4.5V 5.0V 6.0V 7.0V 10V
6
4
3.5V
2
3.0V
0
0
1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V)
4
0
2
4 6 I D , DRAIN CURRENT (A)
8
10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , ON-RESISTANCE (OHM)
0.3
I D = 2.5 A VGS = 10 V
1.4
I D = 1.3A
0.25
R DS(ON) , NORMALIZED
1.2
0.2
1
0.15
TA = 125C
0.8
0.1
TA = 25C
0.05 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10
0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
10
ID , DRAIN CURRENT (A)
8
TA = -55C
125C 25C
IS , REVERSE DRAIN CURRENT (A)
VDS = 5V
V GS = 0V
1
TA = 125C
0.1
6
25C -55C
4
0.01
2
0.001
0
1
2
3 4 5 VGS , GATE TO SOURCE VOLTAGE (V)
6
0.0001
0
0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5.Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
SI3948DV Rev.A
Typical Electrical Characteristics (continued)
10 VGS , GATE-SOURCE VOLTAGE (V)
500
ID = 2.5A
8
C iss
CAPACITANCE (pF)
VDS = 5V
15V
200 100
6
10V
4
C oss
50
2
20
0
f = 1 MHz V GS = 0V
C rss
0
1
2 Q g , GATE CHARGE (nC)
3
4
10 0.1
0.5 1 2 5 10 VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30 10 I D , DRAIN CURRENT (A) 3 1 0.3 0.1 0.03 0.01 0.1
) ON S( RD IT LIM
5
100 us
4 POWER (W)
1m s 10m s 100 ms 1s DC
SINGLE PULSE RJA =180C/W TA = 25C
3
2
VGS = 10V SINGLE PULSE RJA =180C/W TA = 25C
0.3 1 3
1
10
30
50
0 0.01
0.1
1
10
100
300
VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1 0.5
D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2 0.1 0.05
0.2 0.1 0.05 0.02 0.01
R JA (t) = r(t) * R JA R JA =180C/W
P(pk)
t1
t2
0.02 0.01 0.0001
Single Pulse
TJ - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.001
0.01
0.1 t 1 , TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
SI3948DV Rev.A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H1

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